
In recent years, environment compatibility, energy efficiency, flexibility and cost reduction have emerged as critical global issues across the semiconductor industry. Over the years, the electronics industry has been launching various power semiconductor solutions, such as insulated gate bipolar transistors (IGBTs) and super junction MOSFETs (metal oxide field effect transistor). IGBTs and super junction MOSFETs are used in switching applications in different end-user applications, including uninterrupted power supplies (UPS), wind turbines, PV inverters, rail tractions, electric vehicles and hybrid electric vehicles, and other industrial applications. IGBT offers faster switching and higher efficiency. As a power semiconductor device, it competes against other devices and technologies such as Gallium Nitride (GaN), MOSFETs, and Silicon Carbide (SiC) in the market. IGBTs offer the features of both bipolar transistor and MOSFETs offering both high-voltage and high input impedance. IGBTs are preferred for the applications which require high breakdown voltage and high input impedance, owing to their better conductivity modulation characteristics. IGBTs are cost effective as compared to traditional MOSFETs and are replacing traditional MOSFETs in various applications. IGBTs are preferred in motor drive applications where high current and voltage are required.